IR2301S
Overview
600 V high-side and low-side gate driver IC
600 V high and low-side gate driver IC for IGBTs and MOSFETs with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP.
Summary of Features
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 5 to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V and 15 V input logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Outputs in phase with inputs
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